MTP3055VL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
–
62
–
Vdc
–
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
µAdc
–
–
10
–
–
100
IGSS
–
–
100
nAdc
VGS(th)
1.0
1.6
2.0
Vdc
–
3.0
–
mV/°C
Static Drain–Source On–Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc)
RDS(on)
–
0.12
0.18
Ohm
Drain–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150°C)
VDS(on)
Vdc
–
1.6
2.6
–
–
2.5
Forward Transconductance (VDS = 8.0 Vdc, ID = 6.0 Adc)
gFS
5.0
8.8
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
410
570
pF
–
114
160
–
21
40
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc,
RG = 9.1 Ω)
td(on)
tr
td(off)
tf
–
9.0
20
ns
–
85
190
–
14
30
–
43
90
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc)
QT
–
8.1
10
nC
Q1
–
1.8
–
Q2
–
4.2
–
Q3
–
3.8
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
Vdc
–
0.97
1.3
–
0.86
–
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
–
55.7
–
ns
–
37
–
–
18.7
–
–
0.116
–
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
nH
–
3.5
–
4.5
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
–
7.5
–
nH
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