C1972 データシートの表示（PDF） - Advanced Semiconductor
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C1972 Datasheet PDF : 1 Pages
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2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF
power amplifiers on VHF band mobile
radio applications.
FEATURES INCLUDE:
• Replaces Original 2SC1972 in
Most Applications
• High Gain Reduces Drive
Requirements
• Economical TO-220CE Package
MAXIMUM RATINGS
IC
3.5 A
VCBO
35 V
PDISS
25 W @ TC = 25 °C
TSTG
-55 °C to +175 °C
θJC
6.0 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 50 mA
BVCBO
IC = 10 mA
BVEBO
IE = 10 mA
ICBO
VCES = 25 V
IEBO
VEB = 3.0 V
hFE
VCE = 10 V
IC = 100 mA
ηC
POUT
VCC = 13.5 V
PIN = 2.5 W
f =175 MHz
MINIMUM TYPICAL MAXIMUM
17
35
4.0
100
500
10
50
180
60
70
14
15
UNITS
V
V
V
µA
µA
---
%
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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