BD9329AEFJ データシートの表示（PDF） - ROHM Semiconductor
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BD9329AEFJ Datasheet PDF : 16 Pages
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BD9329AEFJ
●Operation Range (Ta= -40～85℃)
Parameter
Supply Voltage
SW Voltage
Output current
Output voltage range
Symbol
VIN
VSW
ISW3
VRANGE
Min
Ratings
Typ
Max
Unit
4.2
12
18
V
-0.5
-
18
V
-
-
3
A
0.9
-
VIN x 0.7 V
Technical Note
●Electrical characteristics (Unless otherwise specified VIN=12V Ta=25℃)
Parameter
Symbol
Min
Limits
Typ
Error amplifier block
FB input bias current
IFB
-
0.02
Feedback voltage1
VFB1
0.886
0.900
Feedback voltage2
SW block – SW
Hi-side FET On-resistance
VFB2
0.882
0.900
RONH
-
0.15
Lo-side FET On-resistance
RONL
-
0.13
Hi/Lo-side FET Leak current
ILEAKN
-
0
Switch Current Limit
ILIMIT3
3.5
-
Maximum duty cycle
General
Enable Sink current
MDUTY
-
90
IEN
90
180
Enable Threshold voltage
VEN
1.0
1.2
Under Voltage Lockout threshold
VUVLO
3.5
3.75
Under Voltage Lockout Hysteresis
VHYS
-
0.3
Soft Start Current
ISS
5
10
Soft Start Time
TSS
-
22
Operating Frequency
FOSC
300
380
Circuit Current
ICC
-
1.2
Quiescent Current
IQUI
-
15
Max
2
0.914
0.918
-
-
10
-
-
270
1.4
4.0
-
15
-
460
3
27
Unit
Conditions
µA
V Voltage follower
V Ta=-25℃～85℃
Ω ISW= -0.8A
Ω ISW= 0.8A
µA
VIN= 18V,
VSW = 0V / 18V
A
% VFB= 0V
µA VEN= 12V
V
V VIN rising
V
µA VSS= 0 V
ms CSS= 0.1 µF
kHz
mA VFB= 1.5V, VEN= 12V
µA VEN= 0V
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2/15
2011.02 - Rev.A
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