99227 データシートの表示（PDF） - IXYS CORPORATION
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99227 Datasheet PDF : 5 Pages
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IXTC 26N50P
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS= 10 V; ID = T , pulse test
20 28
S
3600
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
380
pF
48
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 4 Ω (External)
20
ns
25
ns
58
ns
20
ns
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
96
nC
20
nC
45
nC
0.21
1.25 K/W
K/W
ISOPLUS220 Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. typ. Max.
IS
VGS = 0 V
26 A
ISM
Repetitive
78 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5 V
trr
IF = 25 A
-di/dt = 100 A/µs
QRM
VR = 100 V
400
ns
5.0
µC
Note: Test Current IT = 13A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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