STB8NC50-1 データシートの表示（PDF） - STMicroelectronics

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STB8NC50-1

N-CHANNEL 500V - PowerMesh II MOSFET

STMicroelectronics 

STP8NC50 - STP8NC50FP

STB8NC50-1

N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK

PowerMesh™II MOSFET

TYPE

VDSS

RDS(on)

ID

STP(B)8NC50(-1) 500 V < 0.85 Ω

8A

STP8NC50FP

500 V < 0.85 Ω

8A

s TYPICAL RDS(on) = 0.7 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK

s GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVES

TO-220

3

2

1

TO-220FP

123

I²PAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

December 2000

Value

STP(B)8NC50(-1) STP8NC50FP

500

500

±30

8

8(*)

5.4

5.4(*)

32

32(*)

135

40

1.075

0.32

3

-

2000

–65 to 150

150

Unit

V

V

V

A

A

A

W

W/°C

V/ns

V

°C

°C

(1)ISD ≤8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

1/10

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