2SC3678 データシートの表示（PDF） - Inchange Semiconductor
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2SC3678 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3678
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
800
V
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
0.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=1A; IB=0.2A
VCB=800V; IE=0
VEB=7V; IC=0
1.2
V
100 μA
100 μA
hFE
DC current gain
IC=1A ; VCE=4V
10
30
Cob
Output capacitance
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
Switching times
ton
Turn-on time
ts
Storage time
IE=0 ; VCB=10V;f=1MHz
IE=-0.3A ; VCE=12V
IC=1A; IB1=0.15A;IB2=-0.5A
RL=250Ω,VCC=250V
50
pF
6
MHz
1.0
μs
5.0
μs
tf
Fall time
1.0
μs
2
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