D669 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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D669

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD669, 2SD669A

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

Ratings

2SD669

2SD669A

Unit

180

180

V

120

160

V

5

5

V

1.5

1.5

A

3

3

A

1

1

W

20

20

W

150

150

°C

–55 to +150

–55 to +150

°C

2

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