SIA811ADJ-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors

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SIA811ADJ-T1-GE3

P-Channel 20 V (D-S) MOSFET with Schottky Diode

Vishay Semiconductors 

www.vishay.com

SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

SiA811ADJ

Vishay Siliconix

100

10

1

20 V

0.1

5V

0.01

0.001

0.0001

0.00001

- 50 - 25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Reverse Current vs. Junction Temperature

300

10

1

TJ = 150 °C

TJ = 25 °C

0.1

0.01

0.0

0.1

0.2

0.3

0.4

0.5

VF - Forward Voltage Drop (V)

Forward Voltage Drop

240

180

120

60

0

0

4

8

12

16

20

VRS - Reverse Voltage (V)

Capacitance

S-82482-Rev. A, 13-Oct-08

8

Document Number: 68955

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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