SIA811ADJ-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors

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SIA811ADJ-T1-GE3

P-Channel 20 V (D-S) MOSFET with Schottky Diode

Vishay Semiconductors 

www.vishay.com

SiA811ADJ

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET with Schottky Diode

PowerPAK® SC-70-6L Dual with Schottky Diode

K

G6

S5

4

K

D

1 2.05 mm

Top View

Marking code: HD

1

2A

3 NC

D

Bottom View

PRODUCT SUMMARY

MOSFET

VDS (V)

RDS(on) max. () at VGS = -4.5 V

RDS(on) max. () at VGS = -2.5 V

RDS(on) max. () at VGS = -1.8 V

Qg typ. (nC)

ID (A) a

SCHOTTKY

VKA (V)

VF (V) at 1 A

IF (A) a

Configuration

-20

0.116

0.155

0.205

4.9

-4.5

20

0.45

2

Dual plus integrated Schottky

FEATURES

• LITTLE FOOT® plus Schottky power MOSFET

• New thermally enhanced PowerPAK® 

SC-70 package

- Small footprint area

- Low on-resistance

- Thin 0.75 mm profile

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Cellular charger switch

S

K

• Asynchronous DC/DC for

portable devices

• Load switch for portable G

devices

D

A

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK SC-70

SiA811ADJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage (MOSFET)

VDS

Reverse voltage (Schottky)

VKA

Gate-source voltage (MOSFET)

VGS

TC = 25 °C

Continuous drain current (TJ = 150 °C) (MOSFET)

TC = 70 °C

TA = 25 °C

ID

TA = 70 °C

Pulsed drain current (MOSFET)

IDM

Continuous source-drain diode current 

(MOSFET diode conduction)

TC = 25 °C

TA = 25 °C

IS

Average forward current (Schottky)

IF

Pulsed forward current (Schottky)

IFM

TC = 25 °C

Maximum power dissipation (MOSFET)

TC = 70 °C

TA = 25 °C

TA = 70 °C

TC = 25 °C

PD

Maximum power dissipation (Schottky)

TC = 70 °C

TA = 25 °C

TA = 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) d, e

TJ, Tstg

LIMIT

-20

20

±8

-4.5 a

-4.5 a

-3.2 b, c

-2.6b, c

-8

-4.5 a

-1.5 b, c

2b

5

6.5

4.2

1.8 b, c

1.1 b, c

6.8

4.3

1.6 b, c

1 b, c

-55 to +150

260

UNIT

V

A

W

°C

S-82482-Rev. A, 13-Oct-08

1

Document Number: 68955

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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