AVRM1608C390KT271N データシートの表示（PDF） - TDK Corporation
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AVRM1608C390KT271N
TDK Corporation
AVRM1608C390KT271N Datasheet PDF : 11 Pages
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ELECTROSTATIC ABSORPTION CHARACTERISTICS
DISCHARGE CURRENT WAVEFORM
8
7
6
5
4
3
2
1
0
–1
–50
0
150pF, 330Ω,
Contact discharge, Test level 1
50
100
150
200
250
300
Time(ns)
DISCHARGE VOLTAGE WAVEFORM
350
300
250
200
150
100
50
0
–50
–50
Open waveform
AVR-M1005C120MTAAB / V1mA:12V
AVR-M1005C080MTAAB / V1mA:8V
Zener diode /Vz:6.2V
0
50
100
150
200
250
300
Time(ns)
WAVEFORM PARAMETERS [IEC61000-4-2]
Test level
1
2
3
4
ESD Charge
voltage
(kV)
2
4
6
8
First peak current
of discharge
(A)
7.5
15
22.5
30
Rise time
(ns)
0.7 to 1.0
0.7 to 1.0
0.7 to 1.0
0.7 to 1.0
MEASURING CIRCUIT
10MΩ
330Ω
High voltage
150pF
DC power supply
ESD simulator
Discharge gun
Test
sample
ESD
simulator
60dB attenuator
50Ω
Oscilloscope
I/O impedance: 50Ω
Frequency range: DC to 18GHz
ESD ABSORPTION CHARACTERISTICS
COMPARISON OF VARIOUS ELEMENTS
350
300
250
200
150
100
50
0
Peak
Average
Open waveform
316
117
271V
down
258V
down
269V
down
101V
down
93V
down
96V
down
AVR-M1005C080MTAAB AVR-M1005C120MTAAB Zener diode/Vz:6.2V
45
58
47
16
24
21
(voltage)
Peak
voltage
Average
voltage
Peak voltage:Peak voltage of standing up part
Average voltage : Average voltage of 30 to 100ns
ESD (Electro Static Discharge)
absorption characteristics of V1mA-8V
is superior to Vz-6.2V Zener diode.
30
100
(ns)
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
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