IS61LV12824-9B データシートの表示（PDF） - Integrated Circuit Solution Inc

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IS61LV12824-9B

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Circuit Solution Inc 

IS61LV12824

128K x 24 HIGH-SPEED CMOS STATIC RAM

WITH 3.3V SUPPLY

FEATURES

• High-speed access time: 8, 9, 10, 12 ns

• CMOS low power operation

— 720 mW (typical) operating @ 9 ns

— 36 mW (typical) standby @ 9 ns

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

required

• Three state outputs

• Available in 119-pin 14x22mm PBGA

DESCRIPTION

The ICSI IS61LV12824 is a high-speed, static RAM organized

as 131,072 words by 24 bits. It is fabricated using ICSI's high-

performance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields ac-

cess times as fast as 8 ns with low power consumption.

When CE1, CE2 are HIGH and CE2 is LOW (deselected), the

device assumes a standby mode at which the power dissipa-

tion can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and

Output Enable inputs, CE1, CE2, CE2 and OE. The active

LOW Write Enable (WE) controls both writing and reading of

the memory.

The IS61LV12824 is packaged in the JEDEC standard

119-pin 14*22mm PBGA.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

VCC

GND

I/O0-I/O23

DECODER

I/O

DATA

CIRCUIT

128K x 24

MEMORY ARRAY

COLUMN I/O

CE2

CE1

CE2

OE

WE

CONTROL

CIRCUIT

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

Integrated Circuit Solution Inc.

1

SR021-0B

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