HY1707 データシートの表示（PDF） - Unspecified
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HY1707 Datasheet PDF : 16 Pages
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HY1707P/M/B/I/MF/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
70
±25
175
-55 to 175
80
ID M
Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.3mH
320**
80
65
178
90
0.84
62.5
650***
Note：* Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VSD * Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY1707
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
70 74
-
V
VDS=70V, VGS=0V
-
TJ=85°C
-
-
1
µA
-
10
VDS=VGS, IDS=250µA
2
3
4
V
VGS=±25V, VDS=0V
-
- ±100 nA
VGS=10V, IDS=40A
-
6
7 mΩ
ISD=40A, VGS=0V
-
0.8 1
V
-
55
-
ns
IDS=40A, dlSD/dt=100A/µs
-
100
-
nC
2
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