TGA1307-EPU データシートの表示（PDF） - TriQuint Semiconductor
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TGA1307-EPU Datasheet PDF : 8 Pages
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Advance Product Information
March 25, 2002
TGA1307-EPU
MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter 4/
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
120 mA
0.96 W
15.2 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
3/ Total current for the entire MMIC
4/ These values represent the maximum operable values for this device
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
Idss
VP
BVGS
BVGD
Parameter
Saturated Drain Current
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum Maximum
30
141
-1.5
-0.5
-30
-8
-30
-8
Value
mA
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Vd = 5 V
Symbol Parameter
Test Condition
Gain
IRL
ORL
PWR
NF
Small Signal
Gain
Input Return
Loss
Output Return
Loss
Output Power
@ P1dB
Noise Figure
F = 23 – 29 GHz
F = 23 – 29 GHz
F = 23 – 29 GHz
F = 28 GHz
F = 28 GHz
Limit
Units
Min Typ Max
15
--- dB
---
-4.5 dB
---
-5 dB
14
--- dBm
---
3.5 dB
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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