IXTP180N10T データシートの表示（PDF） - IXYS CORPORATION
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IXTP180N10T Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
VDS= 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
RG = 3.3Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
RthJC
RthCH
TO-220
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = 25A, VGS = 0V, Note 1
trr
IF = 90A, VGS = 0V
IRM
-di/dt = 100A/μs
QRM
VR = 0.5 • VDSS
Characteristic Values
Min. Typ. Max.
70
110
S
6900
pF
923
pF
162
pF
33
ns
54
ns
42
ns
31
ns
151
nC
39
nC
45
nC
0.31 °C/W
0.50
°C/W
Characteristic Values
Min. Typ.
Max.
180 A
450 A
0.95 V
72
ns
5.1
A
0.18
μC
IXTA180N10T
IXTP180N10T
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
TO-220 (IXTP) Outline
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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