MM908E625 データシートの表示（PDF） - Freescale Semiconductor

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MM908E625

Integrated Quad Half H-Bridge with Power Supply, Embedded MCU, and LIN Serial Communication

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. Dynamic Electrical Characteristics

All characteristics are for the analog chip only. Please refer to the specification for 68HC908EY16 for characteristics of the

microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted.

Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

LIN PHYSICAL LAYER

Propagation Delay (13), (14)

TXD Low to LIN Low

TXD High to LIN High

LIN Low to RXD Low

LIN High to RXD High

TXD Symmetry

RXD Symmetry

Output Falling Edge Slew Rate (13), (15)

80% to 20%

Output Rising Edge Slew Rate (13), (15)

20% to 80%, RBUS > 1.0 kΩ, CBUS < 10 nF

LIN Rise/Fall Slew Rate Symmetry (13), (15)

μs

t TXD-LIN-low

–

–

6.0

t TXD-LIN-high

–

–

6.0

t LIN-RXD-low

–

4.0

8.0

t LIN-RXD-

–

4.0

8.0

high

- 2.0

–

2.0

t TXD-SYM

- 2.0

–

2.0

t RXD-SYM

SRF

V/μs

-1.0

- 2.0

- 3.0

SRR

V/μs

1.0

2.0

3.0

SRS

- 2.0

–

2.0

μs

HALL-EFFECT SENSOR INPUTS (H1:H3)

Propagation Delay

t HPPD

–

1.0

–

μs

AUTONOMOUS WATCHDOG (AWD)

AWD Oscillator Period

AWD Period Low = 512 tOSC

TJ < 25 °C

TJ ≥ 25 °C

t OSC

–

40

–

μs

t AWDPH

ms

16

27

34

16

22

28

AWD Period High = 256 tOSC

TJ < 25 °C

TJ ≥ 25 °C

t AWDPL

ms

8.0

13.5

17

8.0

11

14

AWD Cyclic Wake-up On Time

t AWDHPON

–

90

–

μs

Notes

13. All LIN characteristics are for initial LIN slew rate selection (20 kBaud) (SRS0:SRS1= 00).

14. See Figure 2.

15. See Figure 3.

908E625

10

Analog Integrated Circuit Device Data

Freescale Semiconductor

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