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74HC1G02-Q100 データシートの表示(PDF) - NXP Semiconductors.

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74HC1G02-Q100
NXP
NXP Semiconductors. NXP
74HC1G02-Q100 Datasheet PDF : 12 Pages
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Nexperia
74HC1G02-Q100; 74HCT1G02-Q100
2-input NOR gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol Parameter
Conditions
40 C to +85 C 40 C to +125 C
Min Typ Max Min
Max
ICC
supply current
VI = VCC or GND; IO = 0 A;
-
-
10 -
20
VCC = 5.5 V
ICC
additional supply
per input; VCC = 4.5 V to 5.5 V; -
-
500 -
850
current
VI = VCC 2.1 V; IO = 0 A
CI
input capacitance
- 1.5 -
-
-
Unit
A
A
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb = 25 C. For test circuit see Figure 6
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min Typ Max Min
Max
74HC1G02-Q100
tpd
propagation delay A and B to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V; CL = 50 pF
CPD
power dissipation VI = GND to VCC
capacitance
[1]
-
25
115 -
135
ns
-
9
23
-
27
ns
-
7
-
-
-
ns
-
8
20
-
23
ns
[2] -
18
-
-
-
pF
74HCT1G02-Q100
tpd
propagation delay A and B to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
CPD
power dissipation VI = GND to VCC 1.5 V
capacitance
[1]
-
11
24
-
27
ns
-
9
-
-
-
ns
[2] -
19
-
-
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
(CL VCC2 fo) = sum of outputs
74HC_HCT1G02_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 August 2012
© Nexperia B.V. 2017. All rights reserved
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