FDB86360 データシートの表示（PDF） - Fairchild Semiconductor
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FDB86360 Datasheet PDF : 6 Pages
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Typical Characteristics
1.2
350
1.0
300
CURRENT LIMITED
BY PACKAGE
VGS = 10V
250
0.8
CURRENT LIMITED
200
BY SILICON
0.6
150
0.4
100
0.2
50
0.0
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
0
25
50 75 100 125 150 175 200
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V
1000
100
10
SINGLE PULSE
1
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC
150
100
101
FDB86360_F085 Rev. C2
3
www.fairchildsemi.com
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