NE85634-A データシートの表示（PDF） - California Eastern Laboratories.

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NE85634-A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

California Eastern Laboratories. 

NE85634 / 2SC3357

THERMAL RESISTANCE

Parameter

Junction to Ambient Resistance

Symbol

Rth (j-a) Note

Value

62.5

Unit

°C/W

Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure (1)

Noise Figure (2)

Reverse Transfer Capacitance

Symbol

Test Conditions

ICBO VCB = 10 V, IE = 0 mA

IEBO VEB = 1.0 V, IC = 0 mA

hFE Note 1 VCE = 10 V, IC = 20 mA

fT

VCE = 10 V, IC = 20 mA

⏐S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz

NF VCE = 10 V, IC = 7 mA, f = 1 GHz

NF VCE = 10 V, IC = 40 mA, f = 1 GHz

Cre Note 2 VCB = 10 V, IE = 0 mA, f = 1 MHz

MIN. TYP. MAX. Unit

–

–

1.0

μA

–

–

1.0

μA

50

120

250

–

–

6.5

–

GHz

–

9.0

–

dB

–

1.1

–

dB

–

1.8

3.0

dB

–

0.65

1.0

pF

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal

capacitance bridge.

hFE CLASSIFICATION

Rank

Marking

hFE Value

RH

RH

50 to 100

RF

RF

80 to 160

RE

RE

125 to 250

2

Data Sheet PU10211EJ01V0DS

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