MG12150W-XN2MM データシートの表示（PDF） - Littelfuse, Inc
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MG12150W-XN2MM Datasheet PDF : 6 Pages
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Power Module
1200V 150A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
IGBT
VGE(th)
VCE(sat)
IICES
IGES
RGint
Qge
Cies
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
RthJC
Diode
VF
tRR
IRRM
Erec
RthJCD
Parameters
Test Conditions
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
VCE=VGE, IC=6.0mA
IC=150A, VGE=15V, TJ=25°C
IC=150A, VGE=15V, TJ=125°C
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=150A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
TJ=25°C
TJ=125°C
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
VCC=600V
IC=150A
RG =2.4Ω
VGE=±15V
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
Turn - off Energy
TJ=25°C
TJ=125°C
Short Circuit Current
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
Junction-to-Case Thermal Resistance (Per IGBT)
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
IF=150A, VGE=0V, TJ =25°C
IF=150A, VGE=0V, TJ =125°C
IF=150A, VR=600V
diF/dt=3600A/µs
TJ=125°C
Junction-to-Case Thermal Resistance (Per Diode)
Min
5.0
-400
Typ
5.8
1.7
1.9
5.0
1.4
10.5
0.4
260
290
30
50
420
520
70
90
12
16
11
14.5
600
1.65
1.65
350
160
13.5
Max
6.5
1
10
400
0.20
0.36
Unit
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
V
V
ns
A
mJ
K/W
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
R25
B25/50
Parameters
Resistance
Test Conditions
Tc=25°C
Min
Typ
Max
5
3375
Unit
KΩ
K
MG12150W-XN2MM
©2015 Littelfuse, Inc
2241
Specifications are subject to change without notice.
Revised:12/04/14
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