IRFPF40 データシートの表示（PDF） - Vishay Semiconductors

部品番号

コンポーネント説明

一致するリスト

IRFPF40

N CHANNEL MOSFET, 900V, 4.7A TO-247

Vishay Semiconductors 

Power MOSFET

IRFPF40, SiHFPF40

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

900

VGS = 10 V

2.5

120

16

67

Single

D

TO-247

S

D

G

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Available

RoHS*

COMPLIANT

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mouting hole.

It also provides greater creepage distance between pins to

meet the requirements of most safety specifications.

TO-247

IRFPF40PbF

SiHFPF40-E3

IRFPF40

SiHFPF40

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TC = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Mounting Torque

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 42 mH, RG = 25 Ω, IAS = 4.7 A (see fig. 12).

c. ISD ≤ 4.7 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

LIMIT

900

± 20

4.7

2.9

19

1.2

500

4.7

15

150

1.5

- 55 to + 150

300d

10

1.1

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

lbf · in

N·m

Document Number: 91250

S-81377-Rev. A, 30-Jun-08

www.vishay.com

1

Share Link: