STTH200L04TV1 データシートの表示（PDF） - STMicroelectronics

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STTH200L04TV1

Ultrafast high voltage rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STTH200L04TV1

Table 2.

Symbol

Absolute ratings (limiting values, per diode)

Parameter

Value

Unit

VRRM Repetitive peak reverse voltage

400

V

IF(RMS) Forward rms current

200

A

IF(AV) Average forward current

Tc = 90 °C δ = 0.5 Per diode

100

A

Tc = 73 °C δ = 0.5 Per diode

120

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal

900

A

Tstg Storage temperature range

Tj Maximum operating junction temperature

-55 to + 150 °C

150

°C

Table 3.

Symbol

Thermal resistance

Parameter

Value

(max).

Unit

Rth(j-c) Junction to case

Per diode

Total

Rth(c) Coupling

When diodes 1 and 2 are used simultaneously:

Δ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

0.50

0.30

°C/W

0.10

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

IR(1)

Reverse leakage

current

Tj = 25 °C

Tj = 125 °C VR = VRRM

VF(2)

Tj = 25 °C

Forward voltage drop

IF = 100 A

Tj = 150 °C

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.8 x IF(AV) + 0.002 IF2(RMS)

100

µA

100 1000

1.2

V

0.83

1.0

2/8

Doc ID 12827 Rev 2

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