2N7002PS データシートの表示（PDF） - NXP Semiconductors.
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2N7002PS Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002PS
60 V, 320 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Symbol
S1
G1
D2
S2
G2
D1
Description
source1
gate1
drain2
source2
gate2
drain1
Simplified outline Graphic symbol
654
D1
D2
123
S1 G1 S2 G2
msd901
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N7002PS SC-88
plastic surface-mounted package; 6 leads
4. Marking
Table 4. Marking codes
Type number
2N7002PS
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
M8*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VDS
drain-source voltage
Tamb = 25 °C
-
VGS
gate-source voltage
Tamb = 25 °C
-
ID
drain current
VGS = 10 V
[1]
Tamb = 25 °C
-
Tamb = 100 °C
-
IDM
peak drain current
Tamb = 25 °C;
-
single pulse; tp ≤ 10 μs
Version
SOT363
Max Unit
60
V
±20
V
320
mA
240
mA
1.2
A
2N7002PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
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