E28F640J5 データシートの表示（PDF） - Intel

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E28F640J5

INTEL StrataFlash™ MEMORY TECHNOLOGY 32 AND 64 MBIT

Intel 

INTEL StrataFlash™ MEMORY TECHNOLOGY, 32 AND 64 MBIT

E

Symbol

BYTE#

VPEN

VCC

VCCQ

GND

NC

Table 1. Lead Descriptions (Continued)

Type

Name and Function

INPUT

BYTE ENABLE: BYTE# low places the device in x8 mode. All data is then input

or output on DQ0–DQ7, while DQ8–DQ15 float. Address A0 selects between the

high and low byte. BYTE# high places the device in x16 mode, and turns off the

A0 input buffer. Address A1 then becomes the lowest order address.

INPUT ERASE / PROGRAM / BLOCK LOCK ENABLE: For erasing array blocks,

programming data, or configuring lock-bits.

With VPEN ≤ VPENLK, memory contents cannot be altered.

SUPPLY DEVICE POWER SUPPLY: With VCC ≤ VLKO, all write attempts to the flash

memory are inhibited.

OUTPUT OUTPUT BUFFER POWER SUPPLY: This voltage controls the device’s output

BUFFER voltages. To obtain output voltages compatible with system data bus voltages,

SUPPLY connect VCCQ to the system supply voltage.

SUPPLY GROUND: Do not float any ground pins.

NO CONNECT: Lead is not internally connected; it may be driven or floated.

8

ADVANCE INFORMATION

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