IXGF32N170 データシートの表示（PDF） - IXYS CORPORATION
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IXGF32N170 Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = 32A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = 32A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eoff
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 32A, VGE = 15V
VCE = 0.6 • VCES, RG = 2.7Ω
Inductive load, TJ = 125°C
IC = 32A, VGE = 15V
VCE = 0.6 • VCES, RG = 2.7Ω
RthJC
RthCS
RthJA
Characteristic Values
Min. Typ.
Max.
20
30
S
4290
pF
167
pF
47
pF
146
nC
28
nC
52
nC
45
ns
38
ns
270 500 ns
250 500 ns
10.6
20 mJ
48
ns
42
ns
6.0
mJ
360
ns
560
ns
13.5
mJ
0.62 °C/W
0.15
°C/W
30
°C/W
IXGF32N170
ISOPLUS i4-PakTM (HV) (IXGF) Outline
Notes: 1. Pulse test, t < 300μs; duty cycle, d < 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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