STB21N65M5 データシートの表示（PDF） - STMicroelectronics

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STB21N65M5

N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247

STMicroelectronics 

STB/F/I/P/W21N65M5

3

Test circuits

Test circuits

Figure 19. Switching times test circuit for

resistive load

Figure 20. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

µF

D.U.T.

3.3

µF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

µF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 21. Test circuit for inductive load

Figure 22. Unclamped inductive load test

switching and diode recovery times

circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100µH

B

3.3

B

µF

D

G

RG

S

1000

µF

VDD

Vi

L

VD

2200

3.3

µF

µF

VDD

ID

D.U.T.

Pw

AM01470v1

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

AM01471v1

VDD

VD

IDM

ID

V(BR)DSS

Id

90%Vds

Concept waveform for Inductive Load Turn-off

90%Id

VDD

Vgs

90%Vgs on

10%Vds

Vgs(I(t))

Vds

AM01472v1

Tdelay-off

Trise

Tfall

Tcross -over

10%Id

AM05540v2

Doc ID 15427 Rev 4

9/22

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