STI21N65M5 データシートの表示（PDF） - STMicroelectronics
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STI21N65M5
STMicroelectronics
STI21N65M5 Datasheet PDF : 22 Pages
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STB/F/I/P/W21N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, I²PAK,
D²PAK, TO-247
TO-220FP
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD ≤ 17 A, di/dt ≤ 400 A/µs; VPeak < V(BR)DSS, VDD = 400 V.
± 25
17
10.7
68
125
5
17 (1)
10.7 (1)
68(1)
30
400
15
2500
- 55 to 150
150
Unit
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-247 TO-220FP
Rthj-case
Thermal resistance junction-case
max
Rthj-amb
Thermal resistance junction-
ambient max
Rthj-pcb
Thermal resistance junction-pcb
max
30
Tl
Maximum lead temperature for
soldering purpose
1
62.5
50
300
4.17 °C/W
62.5 °C/W
°C/W
°C
Doc ID 15427 Rev 4
3/22
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