G25N120H3(2014) データシートの表示（PDF） - Infineon Technologies

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G25N120H3
(Rev.:2014)

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

Highspeedswitchingseriesthirdgeneration

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=175°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=175°C,

VCC=600V,IC=25.0A,

VGE=0.0/15.0V,

rG=23.0Ω,Lσ=80nH,

Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode (IKW25N120H3) reverse

recovery.

Tvj=175°C,

VCC=800V,IC=10.0A,

VGE=0.0/15.0V,

rG=3.0Ω,Lσ=80nH,

Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode (IDH15S120) reverse

recovery.

Value

Unit

min. typ. max.

-

26

- ns

-

35

- ns

- 347 - ns

-

50

- ns

- 2.60 - mJ

- 1.70 - mJ

- 4.30 - mJ

- 0.10 - mJ

- 0.62 - mJ

- 0.72 - mJ

6

Rev.2.1,2014-02-27

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