G30H603 データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

一致するリスト

G30H603

600V high speed switching series third generation

Infineon Technologies 

100

td(off)

tf

td(on)

tr

IGP30N60H3

Highspeedswitchingseriesthirdgeneration

1000

td(off)

tf

td(on)

tr

100

10

5 10 15 20 25 30 35 40 45 50 55 60

IC,COLLECTORCURRENT[A]

Figure 9. Typicalswitchingtimesasafunctionof

collectorcurrent

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

rG=10,5Ω,testcircuitinFig.E)

10

3

8

13

18

23

28

33

rG,GATERESISTOR[Ω]

Figure 10. Typicalswitchingtimesasafunctionofgate

resistor

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

IC=30A,testcircuitinFig.E)

td(off)

tf

td(on)

tr

6.0

typ.

min.

5.5

max.

5.0

4.5

100

4.0

3.5

3.0

2.5

10

25

50

75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

2.0

0

25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

Figure 11. Typicalswitchingtimesasafunctionof

junctiontemperature

(ind.load,VCE=400V,VGE=15/0V,IC=30A,

rG=10,5Ω,testcircuitinFig.E)

Figure 12. Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(IC=0.43mA)

8

Rev.2.2,2014-03-11

Share Link: