IRG4BC10S データシートの表示（PDF） - International Rectifier

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IRG4BC10S

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

International Rectifier 

20

16

12

Square wave:

60% of rated

voltage

8

4

Ideal diodes

0

0.1

IRG4BC10S

For both:

Duty cycle: 50%

TJ = 125°C

T sink= 90°C

Gate drive as specified

Power Dissipation = 9.2 W

Triangular wave:

Clamp voltage:

80% of rated

A

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

 TJ = 25 °C

10

 TJ = 150 °C

 VGE = 15V

20µs PULSE WIDTH

1

0.8

1.2

1.6

2.0

2.4

2.8

3.2

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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10  TJ = 150 °C

 TJ = 25 °C

 VCC = 50V

5µs PPUULLSSEEWWIDIDTHTH

1

6

8

10

12

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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