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MGP21N80E データシートの表示(PDF) - Motorola => Freescale

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MGP21N80E
Motorola
Motorola => Freescale Motorola
MGP21N80E Datasheet PDF : 6 Pages
1 2 3 4 5 6
MGP21N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25from package to emitter bond pad)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Symbol
BVCES
BVECS
ICES
IGES
VCE(on)
VGE(th)
gfe
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
LE
Min
Typ
Max
Unit
600
870
Vdc
mV/°C
15
Vdc
µAdc
10
200
50
mAdc
Vdc
1.6
2.0
1.5
2.2
2.5
Vdc
4.0
6.0
8.0
10
mV/°C
8.6
Mhos
1605
pF
146
23
29
ns
60
238
140
0.8
mJ
28
ns
62
338
220
1.3
mJ
86
nC
18
39
nH
7.5
2
Motorola TMOS Power MOSFET Transistor Device Data

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