IXTP18N60PM データシートの表示（PDF） - IXYS CORPORATION
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IXTP18N60PM Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 9A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 9A
RG = 5Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 9A
RthJC
Characteristic Values
Min. Typ. Max.
9
16
S
2500
pF
280
pF
23
pF
21
ns
22
ns
62
ns
22
ns
50
nC
15
nC
18
nC
1.39 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = IS, VGS = 0V, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max.
18 A
54 A
1.5 V
500
ns
IXTP18N60PM
OVERMOLDED TO-220
12 3
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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