XN0A311 データシートの表示（PDF） - Panasonic Corporation

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XN0A311

Composite Transistors

Panasonic Corporation 

XN0A311

■ Electrical Characteristics Ta = 25°C ± 3°C

• Tr1

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0

50

V

Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0

50

V

Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0

0.1

µA

Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0

0.5

µA

Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0

0.5 mA

Forward current transfer ratio

hFE VCE = 10 V, IC = 5 mA

35



Collector-emitter saturation voltage

VCE(sat) IC = 10 mA, IB = 0.3 mA

0.25

V

Output voltage high-level

VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ

4.9

V

Output voltage low-level

VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ

0.2

V

Input resistance

R1

−30% 10 +30% kΩ

/ Resistance ratio

R1 / R2

0.8 1.0 1.2



e Transition frequency

fT

VCB = 10 V, IE = −2 mA, f = 200 MHz

150

MHz

pe) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

nc d ge. edty • Tr2

sta tinu Parameter

Symbol

Conditions

Min Typ Max Unit

a e cycle iscon Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0

−50

V

life d, d Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0

−50

V

n u duct type Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0

− 0.1 µA

te tin Pro ued Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0

− 0.5 µA

four ntin Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0

− 0.5 mA

wing disco Forward current transfer ratio

hFE VCE = −10 V, IC = −5 mA

35



in n follo ed Collector-emitter saturation voltage

VCE(sat) IC = −10 mA, IB = − 0.3 mA

− 0.25 V

es plan Output voltage high-level

VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9

V

a o includ type, Output voltage low-level

VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ

− 0.2 V

c ed ce Input resistance

R1

−30% 10 +30% kΩ

M is ntinu tenan Resistance ratio

R1 / R2

0.8 1.0 1.2



isco ain Transition frequency

fT

VCB = −10 V, IE = 1 mA, f = 200 MHz

80

MHz

e/D e, m Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

D nanc e typ Common characteristics chart

ainte nanc PT  Ta

M inte 500

(planed ma 400

300

200

100

0

0

40

80

120

160

Ambient temperature Ta (°C)

2

SJJ00234CED

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