2SC1384(2011) データシートの表示（PDF） - Unisonic Technologies
部品番号
コンポーネント説明
一致するリスト
2SC1384 Datasheet PDF : 5 Pages
| |||
2SC1384
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Peak Collector Current
ICP
1.5
A
Collector Current (DC)
Collector Dissipation (TA=25℃)
IC
1
A
PC
1000
mW
Junction Temperature
TJ
125
℃
Operating Temperature
TOPR
-20 ~ +85
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
COB
CLASSIFICATION OF hFE
TEST CONDITIONS
IC=10μA, IE=0
IC=2mA, IB=0
IE=10μA, IC=0
VCB=20V, IE=0
VCE=10V, IC=500mA
VCE=5V, IC=1A
IC=0.5A, IB=50mA
IC=0.5A, IB=50mA
VCE=10V, IB=50mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1 μA
85 160 340
50 100
0.2 0.4 V
0.85 1.2 V
200
MHz
11 20 pF
RANK
RANGE
Q
85-170
R
120-240
S
170-340
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R211-005.D
Share Link: 