NSVPZTA92T1G データシートの表示（PDF） - ON Semiconductor
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NSVPZTA92T1G Datasheet PDF : 6 Pages
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PZTA92T1G, NSVPZTA92T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
−300
−
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Vdc
−300
−
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
Vdc
−5.0
−
Collector-Base Cutoff Current
(VCB = −200 Vdc, IE = 0)
ICBO
mAdc
−
−0.25
Emitter−Base Cutoff Current
(VBE = −3.0 Vdc, IC = 0)
IEBO
mAdc
−
−0.1
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −30 mAdc, VCE = −10 Vdc)
hFE
−
25
−
40
−
40
−
Saturation Voltages
(IC = −20 mAdc, IB = −2.0 mAdc)
(IC = −20 mAdc, IB = −2.0 mAdc)
VCE(sat)
−
VBE(sat)
−
Vdc
− 0.5
− 0.9
DYNAMIC CHARACTERISTICS
Collector−Base Capacitance @ f = 1.0 MHz
(VCB = −20 Vdc, IE = 0)
Ccb
pF
−
6.0
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 20 Vdc, f = 100 MHz)
fT
MHz
50
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test Conditions, tp = 300 ms, d 0.02.
300
250
200
150
100
50
0
0.1
TJ = +125°C
25°C
-55°C
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE = 10 Vdc
100
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