ZXLB1600X10TC データシートの表示（PDF） - Diodes Incorporated.

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ZXLB1600X10TC

LCD AND OLED BIAS BOOST CONVERTER - STN, CSTN SCREENS

Diodes Incorporated. 

OBSOLETE

Closest Alternative Part AP5727WUG-7

ZXLB1600

ABSOLUTE MAXIMUM RATINGS

(Voltages to GND unless otherwise stated)

Output voltage

Input voltage

Switch output current

Power dissipation

Operating temperature

Storage temperature

Junction temperature

30V

7V

500mA

800mW

0 to 70ЊC

-55 to 125ЊC

150ЊC

ELECTRICAL CHARACTERISTICS

Test conditions unless otherwise stated: VIN = 3.0V, TAMB = 25°C

Symbol Parameter

Conditions

Min

General

VIN

Input voltage(1)

1.6

IIN

Supply current Shutdown(2)

VEN = 0V

Quiescent

VEN = VIN, IOUT = 0V, Not

switching

Isolating switch

RISO

IISO

VSW(max)

‘On’ resistance

Leakage current

Maximum voltage on SW pin

during normal operation

VEN = VIN

VEN = 0V

LX Switch

ILX

Switch peak current limit(3)

RLX

‘On’ resistance

ILX(leak)

Switch leakage current

VLX

Operating voltage on LX pin

Controller output

0.15

-0.5

VOUT

IOUT

⌬VLNR

⌬VLDR

Output voltage range

Output current

Line regulation

Load regulation

VIN

Lx = 22␮H, VOUT = 28V

5

IOUT = 1mA, 2V < VIN <5.5V

VOUT = 28V, 100␮A < IOUT

< 5mA

fLX

TON

TOFF

␩

Operating frequency

Output ‘ON’ time

Output ‘OFF’ time

Efficiency(4)

LX output low

LX output off

0.9

Lx = 22␮H, VOUT = 20V

Typ

Max Units

5.5 V

3.5

5 ␮A

30

75 ␮A

0.7

2⍀

1 ␮A

VIN+0.5 V

0.35 A

0.5

2⍀

1 ␮A

30 V

28 V

10

mA

0.1

%/V

0.15

%/mA

500 kHz

10 ␮s

µs

80

%

Note:

1) Minimum supply voltage should be maintained above 2V for operation at minimum temperature.

2) Shutdown current includes the operating current for the low battery comparator, which remains active in shutdown mode.

3) This is the dc value. The dynamic value may exceed 350mA during normal operation, due to switching delays, coil inductance and supply

voltage.

4) Efficiency is dependent upon the choice of external components, input/output voltages and load current.(see typical operating curves).

SEMICONDUCTORS

ISSUE 3 - SEPTEMBER 2003

2

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