ILD766 データシートの表示（PDF） - Vishay Semiconductors
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ILD766 Datasheet PDF : 8 Pages
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IL766/ ILD766
Vishay Semiconductors
Output
Each Channel
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Power dissipation
Derate linearly from 25 °C
Test condition
Coupler
Parameter
Isolation test voltage
Test condition
t = 1.0 sec.
Isolation resistance
Total power dissipation (LED plus detector),
single channel
Total power dissipation (LED plus detector),
dual channel
Derate linearly from 25 °C, single channel
Derate linearly from 25 °C, dual channel
Creepage
Clearance
Comparative tracking index per DIN IEC
112/VDE0303, part 1
Storage temperature
Tamb = 25 °C
Tamb = 100 °C
Operating temperature
Lead soldering time at 260 °C
Symbol
BVCEO
BVCBO
Pdiss
Symbol
VISO
RIO
RIO
Ptot
Ptot
Tstg
Tamb
Tsld
Value
60
70
100
1.33
Value
5300
≥ 1012
≥ 1011
250
400
3.3
5.3
≥ 7.0
≥ 7.0
175
- 55 to + 150
- 55 to +100
10
VISHAY
Unit
V
V
mW
mW/°C
Unit
VRMS
Ω
Ω
mW
mW
mW/°C
mW/°C
mm
mm
°C
°C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Test condition
Symbol
Min
Typ.
Max
Unit
IF = ± 10 mA
VF
1.2
1.5
V
Output
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown voltage
IC = 1.0 mA
BVCEO
60
75
V
Collector-base breakdown voltage
IC = 10 µA
BVCBO
60
90
V
Collector-emitter leakage current
VCE = 10 V
ICEO
10
100
nA
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Saturation voltage, collector-emitter
IF = ± 10 mA,
IC = 10 mA
VCEsat
1.0
V
www.vishay.com
2
Document Number 83643
Rev. 1.4, 26-Oct-04
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