LIS3L02AS データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
一致するリスト
LIS3L02AS Datasheet PDF : 7 Pages
| |||
LIS3L02AS
ELECTRICAL CHARACTERISTCS (Temperature range -40°C to +85°C)
Symbol
Parameter
Test Condition
Min.
Typ.
Vdd Supply voltage
3
Idd Supply current
1.0
Voff Zero-g level
T = 25°C
ratiometric to Vdd
Vdd/2-10%
Vdd/2
Ar Acceleration range
0V on FS pin
Vdd on FS pin
±1.8
±2.0
±±6.0
So Sensitivity ratiometric to Vdd T = 25°C
Full-scale = 2g
Vdd/5–10% Vdd/5
T = 25°C
Full-scale = 6g
Vdd/15–10% Vdd/15
NL Non Linearity
Best fit straight line
X, Y axis
Full-scale = 2g
±0.3
Best fit straight line
Z axis
Full-scale = 2g
±0.6
fuc Sensing Element Resonant X, Y axis
4.0
Frequency
Z axis
2.5
an Acceleration noise density
Vdd=5V
100
Full-scale = 2g
Vt Self test output voltage
Ratiometric to Vdd
T = 25°C
@ 5V
TBD
Vst Self test input
Logic 0 level
0
Logic 1 level
2.8
Rout Output impedance
100
Cload Capacitive load drive
320
Max.
Unit
5.25
V
mA
Vdd/2+10%
V
±2.2
g
g
Vdd/5+10%
V/g
Vdd/15+10% V/g
%
%
KHz
KHz
µg/ Hz
V
0.8
V
Vdd
V
kΩ
pF
1 FUNCTIONALITY
1.1 Sensing element
The THELMA process is utilized to create a surface micro-machined accelerometer. The technology al-
lows to carry out suspended silicon structures which are attached to the substrate in a few points called
anchors and free to move on a plane parallel to the substrate itself. To be compatible with the traditional
packaging techniques a cap is placed on top of the sensing element to avoid blocking the moving parts
during the molding phase.
The equivalent circuit for the sensing element is shown in the below figure; when a linear acceleration is
applied, the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-
bridge. This imbalance is measured using charge integration in response to a voltage pulse applied to the
sense capacitor.
The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the
maximum variation of the capacitive load is few tenth of pF.
3/7
Share Link: 