2N6052 データシートの表示（PDF） - Microsemi Corporation

部品番号

コンポーネント説明

一致するリスト

2N6052

PNP DARLINGTON POWER SILICON TRANSISTOR

Microsemi Corporation 

2N6051, 2N6052 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (2)

Forward-Current Transfer Ratio

IC = 1.0 Adc, VCE = 3.0 Vdc

IC = 6.0 Adc, VCE = 3.0 Vdc

IC = 12 Adc, VCE = 3.0 Vdc

Collector-Emitter Saturation Voltage

IC = 12 Adc, IB = 120 mAdc

IC = 6.0 Adc, IB = 24 mAdc

Base-Emitter Saturation Voltage

IC = 12 Adc, IB = 120 mAdc

Base-Emitter Voltage

IC = 6.0 Adc, VCE = 3.0 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Time

VCC = 30 Vdc; IC = 5.0 Adc; IB = 20 mAdc

Turn-Off Time

VCC = 30 Vdc; IC = 5.0 Adc; IB1 = IB2 = 20 mAdc

SAFE OPERATING AREA

DC Tests

TC = +250C + 100C -00, 1 Cycle, t ≥ 1.0 s

Test 1

VCE = 12.5 Vdc, IC = 12 Adc

Test 2

All Types

VCE = 30 Vdc, IC = 5.0 Adc

Test 3

All Types

VCE = 70 Vdc, IC = 200 mAdc

2N6051

VCE = 90 Vdc, IC = 155 mAdc

2N6052

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

VBE

hfe

hfe

Cobo

ton

toff

Min. Max. Unit

1,000

1,000

150

18,000

3.0

Vdc

2.0

4.0

Vdc

2.8

Vdc

10

250

1,000

300

pF

2.0

µs

10

µs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

Share Link: