BD908 データシートの表示（PDF） - Inchange Semiconductor

部品番号

コンポーネント説明

一致するリスト

BD908

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD908

DESCRIPTION

·DC Current Gain -

: hFE = 40@ IC= -0.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -60V(Min)

·Complement to Type BD907

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

-60

VCEO

Collector-Emitter Voltage

-60

VEBO

Emitter-Base Voltage

-5

IC

Collector Current-Continuous

-15

ICM

Collector Current-Peak

-20

IBB

Base Current

-5

PC

Collector Power Dissipation

@ TC=25℃

90

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

A

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

1.38 ℃/W

isc Website：www.iscsemi.cn

Share Link: