2N6515(2001) データシートの表示（PDF） - ON Semiconductor

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2N6515
(Rev.:2001)

High Voltage Transistors

ON Semiconductor 

NPN 2N6515 2N6517 PNP 2N6520

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

OFF CHARACTERISTICS (Continued)

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0)

(VCB = 250 Vdc, IE = 0)

2N6515

2N6517, 2N6520

ICBO

–

–

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS(1)

2N6515, 2N6517

2N6520

IEBO

–

–

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

2N6515

2N6517, 2N6520

hFE

35

20

(IC = 10 mAdc, VCE = 10 Vdc)

2N6515

50

2N6517, 2N6520

30

(IC = 30 mAdc, VCE = 10 Vdc)

2N6515

50

2N6517, 2N6520

30

(IC = 50 mAdc, VCE = 10 Vdc)

2N6515

45

2N6517, 2N6520

20

(IC = 100 mAdc, VCE = 10 Vdc)

2N6515

2N6517, 2N6520

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

Base–Emitter On Voltage

(IC = 100 mAdc, VCE = 10 Vdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product(1)

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)

Collector–Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

2N6515, 2N6517

2N6520

SWITCHING CHARACTERISTICS

Turn–On Time

(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)

Turn–Off Time

(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

25

15

VCE(sat)

–

–

–

–

VBE(sat)

–

–

–

VBE(on)

–

fT

40

Ccb

–

Ceb

–

–

ton

–

toff

–

Max

Unit

nAdc

50

50

nAdc

50

50

–

–

–

–

–

300

200

220

200

–

–

Vdc

0.30

0.35

0.50

1.0

Vdc

0.75

0.85

0.90

2.0

Vdc

200

MHz

6.0

pF

pF

80

100

200

µs

3.5

µs

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