MMBTA92LT1 データシートの表示（PDF） - ON Semiconductor

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MMBTA92LT1

High Voltage Transistor

ON Semiconductor 

MMBTA92LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3)

(IC = −1.0 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

Emitter −Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −200 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = −3.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

(IC = −30 mAdc, VCE = −10 Vdc)

Collector −Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

Base−Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

Collector−Base Capacitance

(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

Min

Max

Unit

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

−300

−300

−5.0

−

−

−

−

−

−0.25

−0.1

Vdc

Vdc

Vdc

mAdc

mAdc

hFE

−

25

−

40

−

25

−

VCE(sat)

Vdc

−

−0.5

VBE(sat)

−

−0.9

Vdc

fT

50

−

MHz

Ccb

pF

−

6.0

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