MPSA42RLRE データシートの表示（PDF） - ON Semiconductor

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MPSA42RLRE

High Voltage Transistors

ON Semiconductor 

MPSA42, MPSA43

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (Note 1.)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

MPSA42

300

MPSA43

200

Collector–Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

MPSA42

300

MPSA43

200

Emitter–Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

(VCB = 160 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1.)

V(BR)EBO

6.0

ICBO

MPSA42

–

MPSA43

–

IEBO

MPSA42

–

MPSA43

–

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 30 mAdc, VCE = 10 Vdc)

Collector–Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

hFE

25

40

40

VCE(sat)

MPSA42

–

MPSA43

–

Base–Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

VBE(sat)

–

Current–Gain – Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

fT

50

Ccb

MPSA42

–

MPSA43

–

Max

Unit

Vdc

–

–

Vdc

–

–

–

Vdc

µAdc

0.1

0.1

µAdc

0.1

0.1

–

–

–

–

Vdc

0.5

0.4

0.9

Vdc

–

MHz

pF

3.0

4.0

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