RHRG3040 データシートの表示（PDF） - Fairchild Semiconductor
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RHRG3040 Datasheet PDF : 5 Pages
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Data Sheet
RHRG3040, RHRG3060
January 2002
30A, 400V - 600V Hyperfast Diodes
The RHRG3040 and RHRG3060 are hyperfast diodes with
soft recovery characteristics (trr < 40ns). They have half the
recovery time of ultrafast diodes and are of silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits, thus
reducing power loss in the switching transistors.
Formerly developmental type TA49063.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRG3040
TO-247
RHRG3040
RHRG3060
TO-247
RHRG3060
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <40ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-247
CATHODE
(BOTTOM
SIDE METAL)
ANODE
CATHODE
A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified
(TC = 120oC)
Forward
Current
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I F(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
RHRG3040
400
400
400
30
70
325
125
20
-65 to 175
RHRG3060
600
600
600
30
UNITS
V
V
V
A
70
A
325
A
125
W
20
mJ
-65 to 175
oC
©2002 Fairchild Semiconductor Corporation
RHRG3040, RHRG3060 Rev. B
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