MJ15023 データシートの表示（PDF） - ON Semiconductor
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MJ15023 Datasheet PDF : 4 Pages
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MJ15023 (PNP), MJ15025 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
MJ15023
MJ15025
VCEO(sus)
200
250
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
MJ15023
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
MJ15025
ICEX
−
−
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
MJ15023
(VCE = 200 Vdc, IB = 0)
MJ15025
ICEO
−
−
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
Both
IEBO
−
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non−repetitive))
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
IS/b
5
2
hFE
15
5
VCE(sat)
−
−
VBE(on)
−
fT
4
Cob
−
Max
Unit
−
−
−
mAdc
250
250
mAdc
500
500
mAdc
500
Adc
−
−
−
60
−
Vdc
1.4
4.0
Vdc
2.2
MHz
−
pF
600
100
50
TC = 25°C
20
10
5.0
1.0
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
0.1
0.1
0.2 0.5 10 20
50 100 250 500 1 k
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
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