MMBTA42LT1G データシートの表示（PDF） - ON Semiconductor
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| MMBTA42LT1G Datasheet PDF : 0 Pages | |||
MMBTA42LT1G, MMBTA43LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MMBTA42
300
−
MMBTA43
200
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
MMBTA42
300
−
MMBTA43
200
−
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
V(BR)EBO
6.0
−
Vdc
MMBTA42
MMBTA43
MMBTA42
MMBTA43
ICBO
IEBO
mAdc
−
0.1
−
0.1
mAdc
−
0.1
−
0.1
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
hFE
−
Both Types
25
−
Both Types
40
−
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
40
−
40
−
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Vdc
MMBTA42
−
0.5
MMBTA43
−
0.5
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
VBE(sat)
−
0.9
Vdc
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
fT
Ccb
MMBTA42
MMBTA43
50
−
MHz
pF
−
3.0
−
4.0
120
100
80
60
40
20
0
0.1
TJ = +125°C
25°C
-55°C
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
http://onsemi.com
2
VCE = 10 Vdc
100
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