DB151G データシートの表示（PDF） - GeneSiC Semiconductor, Inc.
部品番号
コンポーネント説明
一致するリスト
DB151G Datasheet PDF : 3 Pages
| |||
Single Phase Glass Passivated
Silicon Bridge Rectifier
DB151G thru DB154G
VRRM = 50 V - 400 V
IO = 1.5 A
Features
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded
plastic technique
• High surge current capability
• Small size, simple installation
• Types from 50 V up to 400 V VRRM
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic
Terminals: Plated terminals, solderable per MIL-STD-
202, Method 208
Polarity: Polarrity symbols marked on the body
Mounting position: Any
DB Package
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
DB151G
DB152G
DB153G DB154G Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
50
100
200
400
V
35
70
140
280
V
50
100
200
400
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
DB151G
Maximum average forward
rectified current
IO
Ta = 40 °C
1.5
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
50
Maximum instantaneous
forward voltage drop
VF
IF = 1.5 A
1.1
Maximum DC reverse current at
rated DC blocking voltage
IR
Ta = 25 °C
Ta = 125 °C
5
500
Rating for fusing
I2t
t < 8.3 ms
10
Typical junction capacitance Cj
14
Typical thermal resistance
RΘJA
36
DB152G
1.5
50
1.1
5
500
10
14
36
DB153G
1.5
50
1.1
5
500
10
14
36
DB154G Unit
1.5
A
50
A
1.1
V
5
μA
500
10
A2sec
14
pF
36
°C/W
Apr 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1
Share Link: 