STTH1302CFP(2002) データシートの表示（PDF） - STMicroelectronics
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STTH1302CFP Datasheet PDF : 7 Pages
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STTH1302CT/CG/CFP
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration per diode
(TO-220FPAB).
IM(A)
70
60
50
40
30
20
IM
10
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Fig. 6: Average forward current versus ambient tem-
perature (δ=0.5, per diode).
IF(AV)(A)
8
7
6
5
4
3
2
1
0
0
25
Rth(j-a)=Rth(j-c)
D²PAK (S=1cm²)
Rth(j-a)=50°C/W
TO-220AB/D²PAK
TO-220FPAB
Tamb(°C)
50
75
100
125
150
175
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 8: Reverse recovery charges versus dIF/dt
(90% confidence, per diode).
C(nF)
100
10
1
VR(V)
10
100
F=1MHz
VOSC=30VRMS
Tj=25°C
1000
QRR(nC)
240
220
IF=6.5A
VR=200V
200
180
160
140
120
100
80
60
40
20
0
10
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
1000
Fig. 9: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
Fig. 10: Reverse recovery current versus dIF/dt
(90% confidence, per diode).
trr(ns)
80
70
60
50
40
30
20
10
0
10
Tj=25°C
Tj=125°C
dIF/dt(A/µs)
100
IF=6.5A
VR=100V
1000
IRM(A)
12
IF=6.5A
VR=100V
10
8
6
4
2
0
10
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
1000
4/7
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