CM800HA-34H データシートの表示（PDF） - MITSUBISHI ELECTRIC

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CM800HA-34H

HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM800HA-34H

HIGH POWER SWITCHING USE

INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C)

Symbol

Item

Conditions

Ratings

Unit

VCES

Collector-emitter voltage

VGE = 0V

1700

V

VGES

Gate-emitter voltage

VCE = 0V

±20

V

IC

Collector current

ICM

DC, TC = 95°C

Pulse

800

A

(Note 1)

1600

A

IE (Note 2) Emitter current

IEM (Note 2)

Pulse

800

A

(Note 1)

1600

A

PC (Note 3) Maximum collector dissipation TC = 25°C, IGBT part

Tj

Junction temperature

—

Tstg

Storage temperature

—

9200

W

–40 ~ +150

°C

–40 ~ +125

°C

Viso

Isolation voltage

Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.

4000

V

Main terminals screw M8

6.67 ~ 13.00

N·m

—

Mounting torque

Mounting screw M6

2.84 ~ 6.00

N·m

Auxiliary terminals screw M4

0.88 ~ 2.00

N·m

—

Mass

Typical value

1.5

kg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Item

Conditions

Min

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

Gate-emitter

VGE(th)

threshold voltage

IC = 80mA, VCE = 10V

4.5

IGES

Gate-leakage current

VGE = VGES, VCE = 0V

—

VCE(sat)

Collector-emitter

saturation voltage

Tj = 25°C

Tj = 125°C

IC = 800A, VGE = 15V

—

(Note 4)

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 850V, IC = 800A, VGE = 15V

—

td (on)

Turn-on delay time

VCC = 850V, IC = 800A

—

tr

Turn-on rise time

VGE1 = VGE2 = 15V

—

td (off)

Turn-off delay time

RG = 2.5Ω

—

tf

Turn-off fall time

Resistive load switching operation

—

VEC (Note 2) Emitter-collector voltage

IE = 800A, VGE = 0V

—

trr (Note 2) Reverse recovery time

IE = 800A

—

Qrr (Note 2) Reverse recovery charge

die / dt = –1600A / µs

—

Rth(j-c)Q

Junction to case, IGBT part

—

Rth(j-c)R Thermal resistance

Junction to case, FWDi part

—

Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied

—

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Limits

Typ

—

Unit

Max

20 mA

5.5

6.5 V

—

0.5 µA

2.75

3.58

3.30

—

V

93

—

nF

13.3

—

nF

5.1

—

nF

4.4

—

µC

—

1.20 µs

—

1.50 µs

—

2.00 µs

—

0.60 µs

2.40

3.12 V

—

2.00 µs

135

—

µC

— 0.0135 K/W

—

0.042 K/W

0.012

—

K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003

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