T15M64A-100J データシートの表示（PDF） - Taiwan Memory Technology

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T15M64A-100J

8K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

Preliminary T15M64A

AC CHARACTERISTICS

(Vcc= 5V / ± 10%, Vss = 0V, Ta =0 ~ +70 °C)

(1) READ CYCLE

PARAMETER

Read Cycle Time

SYM.

tRC

-50ns

MIN MAX

50 -

-70ns

MIN. MAX.

70 -

-85ns

-100ns UNIT

MIN. MAX. MIN. MAX.

85 - 100 - ns

Address Access Time

tAA

- 50 - 70 - 85 - 100 ns

Chip Select Access Time

tACS - 50 - 70 - 85 - 100 ns

Output Enable to Output Valid

tAOE - 25 - 35 - 40 - 50 ns

Chip Selection to Output in Low Z tCLZ* 7 - 10 - 10 - 10 - ns

Output Enable to Output in Low Z tOLZ* 5 - 5 - 5 - 5 - ns

Chip Deselection to Output in High Z tCHZ* - 20 - 25 - 30 - 30 ns

Output Disable to Output in High Z tOHZ* - 20 - 25 - 30 - 30 ns

Output Hold from Address Change tOH 10 - 10 - 10 - 10 - ns

* These parameters is measured with 5pF test load.

(2)WRITE CYCLE

PARAMETER

Write Cycle Time

Chip Selection to End of Write

Address Valid to End of Write

Address Setup Time

Write Pulse Width

Write Recovery Time

Data Valid to End of Write

Data Hold from End of Write

Write to Output in High Z

Output Active from End of Write

SYM.

tWC

-50ns

MIN MAX

50 -

-70ns

-85ns

-100ns UNIT

MIN. MAX. MIN. MAX. MIN. MAX.

70 - 85 - 100 - ns

tCW 40 - 60 - 70 - 80 - ns

tAW 40 - 60 - 70 - 80 - ns

tAS

0 - 0 - 0 - 0 - ns

tWP

30 - 50 - 60 - 70 - ns

tWR

0 - 0 - 0 - 0 - ns

tDW 25 - 30 - 35 - 40 - ns

tDH

0 - 0 - 0 - 0 - ns

tWHZ* - 20 - 25 - 30 - 30 ns

tOW

5 - 5 - 5 - 5 - ns

* These parameters is measured with 30pF test load.

TM Technology Inc. reserves the right

P. 5

to change products or specifications without notice.

Publication Date: SEP. 2002

Revision:0.A

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