IRF3708L データシートの表示（PDF） - International Rectifier

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IRF3708L

HEXFET® Power MOSFET

International Rectifier 

IRF3708/3708S/3708L

1000

100

2.7V

VGS

TOP

10.0V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM 2.7V

1000

100

2.7V

VGS

TOP

10.0V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM 2.7V

10

10

1

0.1

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1

0.1

20µs PULSE WIDTH

Tj = 175°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

 TJ = 25°C

100

 TJ = 175° C

10

2.0

 V DS = 15V

20µs PULSE WIDTH

3.0

4.0

5.0

6.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5  ID = 62A

2.0

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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